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| 7MBR20SC060 PIM/Built-in converter with thyristor and brake (S series) 600V / 20A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 20 40 20 69 600 20 20 40 69 600 800 800 20 225 125 800 20 140 98 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m Brake Inverter Continuous 1ms 1 device Thyristor 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave Converter 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR20SC060 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=20mA VGE=15V, Ic=20A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=20A VGE=15V RG=120 IF=20A chip terminal IF=20A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=20A, VGE=15V chip terminal VCC=300V IC=20A VGE=15V RG=120 VR=600V VDM=800V VRM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=20A chip terminal IF=20A chip terminal VR=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 50 200 5.5 7.8 8.5 1.8 1.95 2.4 2000 0.45 0.25 0.40 0.05 1.8 1.95 1.2 0.6 1.0 0.35 2.6 300 50 200 2.4 1.2 0.6 1.0 0.35 50 1.0 1.0 100 2.5 1.55 Unit A nA V V pF s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns A nA V s Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 1.8 1.95 0.45 0.25 0.40 0.05 Brake Thyristor Converter 1.2 1.3 1.1 1.2 5000 495 3375 A mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 50 520 3450 A K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.81 3.81 1.81 1.66 2.00 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 7MBR20SC060 50 50 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) VGE= 20V 15V 40 12V 40 VGE= 20V 15V 12V Collector current : Ic [ A ] 30 Collector current : Ic [ A ] 30 20 20 10 10V 10 10V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 50 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 40 Tj= 125C 30 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 20 4 Ic= 40A 2 Ic= 20A Ic= 10A 10 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 500 [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] 1000 300 15 200 10 Coes Cres 100 100 5 50 0 5 10 15 20 25 30 35 0 0 20 40 60 80 100 0 120 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Cies 400 20 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR20SC060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120, Tj= 125C ton ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff tr tr 100 100 tf tf 10 0 10 20 30 40 10 0 10 20 30 40 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=15V, Tj= 25C 5000 2.0 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=120 ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff tr Eon(125C) 1.5 Eoff(125C) Eon(25C) 1.0 Eoff(25C) 100 tf 0.5 Err(125C) Err(25C) 10 50 100 1000 0.0 0 10 20 30 40 Gate resistance : Rg [ ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=15V, Tj= 125C 4 250 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=120, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 200 3 Collector current : Ic [ A ] 150 2 Eoff SCSOA (non-repetitive pulse) 100 1 50 RBSOA (Repetitive pulse) 0 50 100 Gate resistance : Rg [ ] 1000 0 200 400 600 800 Err 0 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR20SC060 [ Inverter ] Forward current vs. Forward on voltage (typ.) 50 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=120 40 Tj=125C Tj=25C 100 trr(125C) Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] trr(25C) 30 Irr(125C) Irr(25C) 10 20 10 0 0 1 2 3 1 0 10 20 30 40 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 50 50 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tj= 25C 40 Tj= 125C Tjw= 125C Tjw= 25C 30 Instantaneous on-state current [ A ] 0.4 0.8 1.2 1.6 2.0 Forward current : IF [ A ] 10 20 5 10 0 0.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ] Transient thermal resistance 10 200 100 FWD[Inverter] [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] Conv. Diode IGBT[Inverter&DB] Thyristor 1 Resistance : R [ k ] 10 1 0.1 0.05 0.001 0.01 0.1 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] IGBT Module 7MBR20SC060 50 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) 50 VGE= 20V 15V 40 12V 40 VGE= 20V 15V 12V Collector current : Ic [ A ] 30 Collector current : Ic [ A ] 30 20 20 10 10V 10 10V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 50 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 25C 40 Tj= 125C 30 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 20 4 Ic= 40A 10 2 Ic= 20A Ic= 10A 0 0 1 2 3 4 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] 1000 300 15 200 10 Coes Cres 100 100 5 50 0 5 10 15 20 25 30 35 0 0 20 40 60 80 100 0 120 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Cies Collector - Emitter voltage : VCE [ V ] 400 20 IGBT Module Outline Drawings, mm 7MBR20SC060 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En) |
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